Product Summary
The IRF840PBF is a Power MOSFET.
Parametrics
IRF840PBF absolute maximum ratings: (1)Drain-current: 8A; (2)Pulsed Drain-current: 32A; (3)Power dissipation: 125W; (4)Linear Derating Factor:1.0 W/℃; (5)Single Pulse Avalanche Energy: 510mJ ; (6)Repetitive Avalanche Current: 8.0 A ; (7)Repetitive Avalanche Energya:13 mJ ; (8)Peak Diode Recovery dV/dt c, e: 3.5 V/ns ; (9)Operating Junction and Storage Temperature Range:- 55 to + 150℃; (10)Soldering Temperature for 10 s: 300d.
Features
IRF840PBF features: (1)Dynamic dv/dt rating; (2)Fast switching; (3)Ease of paralleling; (4)Simple drive requirements; (5)Lead (Pb)-free Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF840PBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF8010 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
IRF8010LPBF |
International Rectifier |
MOSFET N-CH 100V 80A TO-262-3 |
Data Sheet |
|
|
|||||||||||||
IRF8010PBF |
International Rectifier |
MOSFET MOSFT 100V 80A 15mOhm 81nC |
Data Sheet |
|
|
|||||||||||||
IRF8010S |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
IRF8010SPBF |
International Rectifier |
MOSFET |
Data Sheet |
|
|
|||||||||||||
IRF8010STRLPBF |
International Rectifier |
MOSFET MOSFT 100V 80A 15mOhm 81nC |
Data Sheet |
|
|