(China (Mainland))
Product Summary
The BT169G is a Passivated, sensitive gate thyristor in a SOT54 plastic package, which is designed for general purpose switching and phase control applications.
Parametrics
BT169G absolute maximum ratings: (1)VDRM, VRRM, repetitive peak off-state voltages: 600 V; (2)IGM, peak gate current: 1 A; (3)VGM, peak gate voltage: 5 V; (4)VRGM, peak reverse gate voltage: 5 V; (5)PGM, peak gate power: 2 W; (6)PG(AV), average gate power, over any 20 ms period: 0.1 W; (7)Tstg, storage temperature: -40 to +150℃; (8)Tj, junction temperature: 125℃.
Features
BT169G features: (1)Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits; (2)Mounting Style: SMD/SMT; (3)Package / Case: SOT-54; (4)Packaging: Tube.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BT169G AMO |
NXP Semiconductors |
SCRs AMMORA SCR |
Data Sheet |
Negotiable |
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BT169G-L,412 |
NXP Semiconductors |
Rectifiers Silicon Controlled Rectifier |
Data Sheet |
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BT169G/DG,126 |
NXP Semiconductors |
Rectifiers SILICON CONTROLLED RECTIFIERS |
Data Sheet |
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BT169G,126 |
NXP Semiconductors |
SCRs AMMORA SCR |
Data Sheet |
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BT169G,112 |
NXP Semiconductors |
SCRs .8A 600V |
Data Sheet |
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