GT80J101

GT80J101, silicon N-channel MOS type, bipolar transistor, TO-3PL, 600 V, 80 A

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Price:: US $0.20~2.40 / piece [Get Latest Price]

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PartNumber:: GT80J101

Brand:: Toshiba Semiconductor - Toshiba | Pack: TO | D/C: 08+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-08-10

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Part Number:GT80J101
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Product Summary

The GT80J101 is a silicon N-channel MOS type insulated gate bipolar transistor designed for high power switching applications.

Parametrics

GT80J101 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 600 V; (2)Gate-Emitter Voltage, VGES: ±20 V; (3)Collector Current, DC, IC: 80 A; 1ms, ICP: 160 A; (4)Collector Power Dissipation, (Tc = 25℃), PC: 200 W; (5)Junction Temperature, Tj: 150 ℃; (6)Storage Temperature Range, Tstg: -55 to 150 ℃.

Features

GT80J101 features: (1)High Input Impedance; (2)High Speed: tf = 0.40μs (Max.); (3)Low Saturation Voltage: VCE (sat) = 3.5V (Max.); (4)Enhancement-Mode.