(China (Mainland))
Product Summary
The GT80J101 is a silicon N-channel MOS type insulated gate bipolar transistor designed for high power switching applications.
Parametrics
GT80J101 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 600 V; (2)Gate-Emitter Voltage, VGES: ±20 V; (3)Collector Current, DC, IC: 80 A; 1ms, ICP: 160 A; (4)Collector Power Dissipation, (Tc = 25℃), PC: 200 W; (5)Junction Temperature, Tj: 150 ℃; (6)Storage Temperature Range, Tstg: -55 to 150 ℃.
Features
GT80J101 features: (1)High Input Impedance; (2)High Speed: tf = 0.40μs (Max.); (3)Low Saturation Voltage: VCE (sat) = 3.5V (Max.); (4)Enhancement-Mode.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 GT80J101A |
Other |
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Data Sheet |
Negotiable |
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GT80J101B |
Other |
|
Data Sheet |
Negotiable |
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GT80J101B(Q) |
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IGBT 600V 80A TO-3P LH |
Data Sheet |
Negotiable |
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