(China (Mainland))
Product Summary
The W27E040-12 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 × 8 bits that operates on a single 5 volt power supply. The W27E040-12 provides an electrical chip erase function.
Parametrics
W27E040-12 absolute maximum ratings: (1)Ambient Temperature with Power Applied: -55 to +125℃; (2)Storage Temperature: -65 to +125℃; (3)Voltage on all pins with Respect to Ground Except VPP, A9; (4)and VCC pins: -0.5 to VCC +0.5 V; (5)Voltage on VPP Pin with Respect to Ground: -0.5 to +14.5 V; (6)Voltage on A9 Pin with Respect to Ground: -0.5 to +14.5 V; (7)Voltage on VCC Pin with Respect to Ground: -0.5 to +7 V.
Features
W27E040-12 features: (1)High speed access time: 90/120 nS (max.); (2)Read operating current: 15 mA (typ.); (3)Erase/Programming operating current 15 mA (typ.); (4)Standby current: 5 μA (typ.); (5)Single 5V power supply; (6)+14V erase/+12V programming voltage; (7)Fully static operation; (8)All inputs and outputs directly TTL/CMOS compatible; (9)Three-state outputs; (10)Available packages: 32-pin 600 mil DIP, 450 mil SOP, PLCC and TSOP.
Diagrams
 |
 W27E010 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
W27E02 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
W27E020 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
W27E040 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
W27E257 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
W27E512 |
Other |
|
Data Sheet |
Negotiable |
|
||||
